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The Samsung 950 PRO SSD is Samsung’s first consumer-ready Non-Volatile Memory Express (NVMe*) M.2 form factor SSD with vertical NAND (V-NAND) technology; supporting the Peripheral Component Interconnect Express (PCIe) 3.0 interface. With the introduction of NVMe, the first protocol optimized for SSDs, users of the Samsung 950 PRO will benefit from improved performance and power saving which can help increase battery life and potentially reduce operating costs. The drive is ideal for professionals who want cutting-edge performance, higher bandwidth and lower latency from their high-end PCs and workstations, for projects such as computer-aided design, data analysis and engineering simulation. The compact M.2 2280 form factor ensures compatibility with next-generation desktop and mobile platforms that support the M.2 PCIe slot and interface.
“With the introduction of the 950 PRO using NVMe and PCIe, Samsung is able to provide our customers with the memory needed to handle the increased storage demands of tomorrow’s computing systems,” said Un-Soo Kim, Senior Vice President of Branded Memory, Memory Business at Samsung Electronics. “Consumers and businesses alike can experience enterprise-quality performance and benefits such as speed, endurance and energy efficiency to support the most demanding applications. The 950 PRO is yet another example of a branded memory solution that continues to elevate our portfolio of products and reflects Samsung’s continued leadership in the memory industry.”
Featuring the PCIe Gen.3 x4 interface and supporting the NVMe protocol, the Samsung 950 PRO offers improved random and sequential performance over Serial Advanced Technology Attachment (SATA) interface drives utilizing the legacy Advanced Host Controller Interface (AHCI) protocol. Users of applications that benefit from high input/output operations per second (IOPS) will experience up to four times faster performance than with traditional SATA SSDs.
The 950 PRO will be available in 512 gigabyte (GB) and 256GB storage capacities. The 512GB version delivers sequential read/write speeds of up to 2,500 MB/s and 1,500 MB/s. Random read performance is up to 300,000 IOPS, with write speeds of up to 110,000 IOPS. It features Samsung’s second generation MLC V-NAND 32-layer 128Gb die with UBX controller and magician software.
The drive was built to last, with AES 256-bit Full Disk Encryption to protect data and Dynamic Thermal Guard, which can protect the device and data in inclement weather from 0 to 70 degrees Celsius. It can also withstand physical shock of up to 1500G/0.5ms and vibrations up to 20G.
