Infineon and Delta collaborate to propel AI data centre efficiency

Infineon Technologies and Delta Electronics join forces to revolutionise AI data centres with advanced power modules, enhancing efficiency and eco-friendliness.

Infineon Technologies AG and Delta Electronics, Inc. have reinforced their alliance to spearhead innovations in vertical power delivery for AI processors in hyperscale data centres. This partnership is a pivotal step towards synergising decarbonisation and digitalisation efforts within these increasingly vital infrastructures.

This initiative marries Infineon’s advanced silicon MOSFET chip technology with Delta’s cutting-edge power module design, resulting in compact yet highly efficient power modules that champion vertical power delivery (VPD) architecture. Implementing VPD modules offers substantial CO2 savings over conventional lateral solutions, diminishing emissions by up to 150 tons over a typical rack's three-year lifespan.

Such environmental benefits abound when considering future data centres, which may house up to 100 racks, collectively offsetting emissions akin to those of 4000 average households annually. Adam White from Infineon encapsulated this collaboration as a blend of superior silicon expertise and exemplary module development.

These VPD modules significantly advance power delivery by ensuring a direct and streamlined path, effectively boosting power density and reducing heat generation through diminished network losses. Furthermore, this technology liberates valuable system board space, enabling more compact data centre designs that impressively manage total cost.

As AI-driven advancements demand more robust data centre solutions, Infineon and Delta are pioneering next-generation power delivery systems capable of supporting 1 megawatt per rack. Addressing these demands positions them at the forefront of futuristic power distribution solutions tailored to the growing power needs of AI applications.

Complementing this development, Infineon remains a powerhouse in silicon MOSFETs alongside its gallium nitride (GaN) and silicon carbide (SiC) offerings, assuring top-tier performance and efficiency in power processing and conversion realms.

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